30 | Keysight | B1505A Power Device Analyzer/Curve Tracer - Data Sheet
Hardware configuration and measurement/setting parameters (continued)
Package solution
On-wafer solution
0 V to +3000 V
3 mV
-40 to 40 V1
Vds (vce) @high voltage
Resolution
Vds(vce) @ high current
Resolution
-20 to 20 V1
20 µV
-60 to 60 V
-60 to 60 V
100 µV
40 µV
100 µV
Id max
20 A1
450 A1
1100 A1,2
20 A1
350 A1
500 A1
Gate drive vgs(vge)
Resolution
-30 to +30 V
40 µV
1 µA to 1 A
0.1 µA
Gate control current ig
Resolution
Current regulator control
voltage
-30 to +30 V
Resolution
On time
40 µV
50 - 950 µs
50 - 950 µs
50 - 950 µs
50 - 950 µs
Resolution
2 µs
1. The maximum current will be reduced by the series resistance of the current source, residual resistance in the measurement path, and the
DUT impedance.
2. The gate charge measurement adapter also has a maximum current limit of 500 A.
Target devices:
Nch MOSFETs and IGBTs in TO package, in modules and on-wafer
Note that Pch MOSFETs are not supported.
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