SMD Type
BCP51,BCP52,BCP53
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -30 V, I
E
= 0
V
CB
= -30 V, I
E
= 0; Tj = 125
V
EB
= -5 V, I
C
= 0
I
C
= -5 mA; V
CE
= -2 V
DC current gain
h
FE
I
C
= -150 mA; V
CE
= -2 V
I
C
= -500 mA; V
CE
= -2 V
DC current gain BCP51-10,BCP52-10,BCP53-10
BCP51-16,BCP52-16,BCP53-16
Collector-emitter saturation voltage
Base to emitter voltage
Transition frequency
h
FE
I
C
= -150 mA; V
CE
= -2 V
I
C
= -150 mA; V
CE
= -2 V
V
CE(sat)
I
C
= -500 mA; I
B
= -50 mA
V
BE
f
T
I
C
= -500 mA; V
CE
= -2 V
I
C
= -10 mA; V
CE
= -5 V; f = 100 MHz
Transistors
Min
Typ
Max
-100
-10
-100
Unit
nA
ìA
nA
63
63
40
63
100
160
250
-0.5
-1
115
V
V
MHz
250
2
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