SMD Type
Transistors
NPN Multi-Chip General Purpose Amplifier
KC847S
(BC847S)
SO
T
-363
Unit: mm
Features
High current gain
Low collector-emitter saturation voltage
+0.1
1.3
-0.1
0.65
0.525
0.36
0.1max
+0.1
0.3
-0.1
+0.1
2.1
-0.1
+0.05
0.1
-0.02
1 E1
2 B1
3 C2
4 E2
5 B2
6 C1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
Derate above 25
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
R
JA
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Rating
50
45
6.0
100
300
2.4
415
-55 to +150
Unit
V
V
V
mA
mW
mW/
/W
T
J
, T
stg
Electrical Characteristics Ta = 25
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
I
C
= 10
Testconditons
A, I
E
= 0
Min
50
45
6.0
15
5.0
110
630
0.25
0.65
0.58
0.7
0.77
2.0
200
V
V
V
V
pF
MHz
Typ
Max
Unit
V
V
V
nA
A
I
C
= 10 mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 150
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
Base-Emitter ON Voltage
Output Capacitance
Transistion frequency
V
BE(on)
C
ob
f
T
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
V
CB
= 10 V, f = 1.0 MHz
I
C
= 20 mA, V
CE
= 5.0,f = 100 mHz
Marking
Marking
1C
+0.05
0.95
-0.05
+0.1
1.25
-0.1
+0.15
2.3
-0.15
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