SMD Type
High Voltage,General Purpose Diode
KAV103
(BAV103
Diodes
LL-34
Unit: mm
Features
Silicon Epitaxial Planar Diodes
For general purpose
2.64REF
0.50
0.35
1.50
1.30
3.60
3.30
Absolute Maximum Ratings Ta = 25
Parameter
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Total Power Dissipation at TA = 25
Linear Derating Factor from TA = 25
Thermal Resistance Junction-to-Ambient
Operating Junction Temperature
Storage Temperature
R
JA
Symbol
Wiv
I
O
I
F
i
f
i
F(surge)
Rating
200
200
500
600
1
4
Unit
V
mA
mA
mA
A
mW
mW/
/W
P
D
500
3.33
350
-65 to +200
-65 to +200
T
J
T
stg
Electrical Characteristics Ta = 25
Parameter
Breakdown Voltage
Reverse Leakage
Symbol
B
V
I
R
I
R
= 100 uA
V
R
= 200 V
V
R
= 200 V T
A
= 150
Forward Voltage
Capacitance
Reverse Recovery Time
V
F
C
T
T
RR
I
F
= 100 mA
I
F
= 200 mA
V
R
= 0.0 V,f = 1.0 MHz
I
F
= I
R
=30 mA ,I
RR
= 1.0 mA,R
L
= 100
Testconditons
Min
250
100
100
1.00
1.25
5.0
50
Typ
Max
Unit
V
nA
uA
V
V
pF
ns
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