SMD Type
Transistors
NPN
Tr
ansistors
2SD882
1.70 0.1
Features
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
IC
40
30
V
6
3
V
A
Pc
0.5
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
Ic=100uA ,IE=0
Min
40
30
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC= 10 mA , IB=0
IE= 100 uA ,IC=0
VCB=40 V , IE=0
VCE=30 V , IB=0
VEB=6V , IC=0
V
V
1
10
1
uA
uA
uA
Collector cut-off current
Emitter cut-off current
VCE= 2V, IC= 1A
VCE=2V, IC= 100mA
IC=2A, IB= 0.2A
IC=2A, IB= 0.2A
60
32
400
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
f T
0.5
1.5
V
V
VCE=5 V, IC=0.1mA,f = 10MHz
50
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD882-R
60-120
882R
2SD882-Q
2SD882-P
160-320
882P
2SD882-E
200-400
882E
100-200
882Q
1
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