SMD Type
Transistors
2SB1201
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
Min
Typ
Max
-100
-100
560
Unit
nA
VCB = -50V , IE = 0
IEBO
VEB = -4V , IC = 0
nA
VCE = -2V , IC = -100mA
VCE = -2V , IC = -1.5A
VCE = -10V , IC = -50mA
VCB = -10V , f = 1MHz
100
40
DC current Gain
hFE
Gain bandwidth product
fT
150
22
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
VCE(sat) IC = -1A , IB = -50mA
VBE(sat) IC = -1A , IB = -50mA
V(BR)CBO IC = -10ìA , IE = 0
-0.3
-0.9
-0.7
-1.2
V
-60
-50
-6
V
V
IC = -1mA , RBE =
IE = -10ìA , IC = 0
V(BR)CEO
V(BR)EBO
V
Turn-on time
Storage time
Fall time
ton
tstg
tf
60
450
30
ns
ns
ns
hFE Classification
Rank
hFE
R
S
T
U
100 200
140 280
200 400
280 560
2
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