SMD Type
Transistors
PNP Transistors
2SB1189
■ Typical Characterisitics
−1.0
−50
Ta=25°C
Ta
VCE=
=
25°C
−6V
Ta=25°C
−10mA
−9mA
−20
500
−0.8
−0.6
−0.4
−10
−5
V
CE= −5V
200
100
−2
−1
−2mA
−1mA
−0.5
−3V
−0.2
50
−0.2
−0.1
−1
V
I
B
=0mA
0
0
−2
−4
−6
−8
−10
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1
−2
−5
−10 −20
−50 −100 −200 −500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
COLLECTOR CURRENT : IC (mA)
Fig.1 Ground emitter output characteristics
Fig.3 DC current gain vs. collector current
Ta
VCE=−5V
=
25°C
Ta=25°C
Ta=25°C
f
=1MHz
=0A
100
50
I
E
500
−0.2
−0.1
200
100
IC/IB=20/1
Cob
−0.05
IC/IB=10/1
20
10
50
20
−0.02
−0.01
2
5
10
20
50
−0.5
−1
−2
−5
−10
−20
−1
−5
−10 −20
−50 −100 −200 −500
EMITTER CURRENT : I (mA)
E
COLLECTOR TO BASE VOLTAGE : VCE (V)
COLLECTOR CURRENT : I (mA)
C
Fig.5 Gain bandwidth product vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
Fig.4 Collector-emitter saturation voltage
vs.collector current
−1.0
−0.5
Ta=25°C
f
I
=1MHz
=0A
Cib
100
50
C
−0.2
−0.1
−0.05
−0.02
−0.01
20
10
−0.005
−0.002
−0.001
Ta
=25°C
*Single pulse
−0.5
−1
−2
−5
−10
−20
−0.1
−0.2
−0.5
−1
−2
−5
−10 −20
−50 −100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area (2SB1189)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
2
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