SMD Type
Transistors
PNP Transistors
2SB1181
■ Typical Characterisitics
1000
500
−1000
Ta=25°C
Ta=25°C
Ta=25°C
CE = −5V
−1.0
−0.8
−0.6
V
−4.5mA
−100
−10
−4mA
−3.5mA
−3mA
200
100
50
V
CE = − 3V
−1V
−2.5mA
−2mA
−0.4
−0.2
0
−1.5mA
−1mA
1
20
10
−0.5mA
IB
=0mA
−0.1
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−1 −2
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
1000
500
1000
500
Ta=25°C
CE = −5V
Ta=25°C
Ta
1MHz
0A
=25°C
V
f
=
−2
−1
IE=
200
100
200
100
50
−0.5
−0.2
50
20
10
20
10
IC
/IB
=20
10
−0.1
−0.05
5
5
−0.02
−0.01
2
1
2
1
1
2
5
10 20
50 100 200 500 1000
−1
−2
−5
−10
−20
−50
−100
−200
−500
−1000
−2000
−0.1 -0.2
−0.5 -1 −2
−5 −10 −20 −50 −100
COLLECTOR CURRENT : I (mA)
C
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
Fig.4 Collector-emitter saturation
voltage vs. collector current
2
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