SMD Type
Transistors
PNP Transistors
2SB1172
■ Typical Characterisitics
PC
Ta
IC VCE
IC VBE
−10
−8
−6
−4
−2
0
−6
20
15
10
5
TC =25˚C
V CE =–4V
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
−5
I =–100mA
B
−4
−3
−2
−1
0
–80mA
–60mA
25˚C
–25˚C
–40mA
TC =100˚C
(1)
–30mA
–20mA
–12mA
–8mA
–4mA
(2)
80
–16mA
0
0
− 0.4 − 0.8 −1.2 −1.6 −2.0
0
−2
−4
−6
−8 −10 −12
0
40
120
160
)
(
V
)
Base-emitter voltage V
(
)
(
Collector-emitter voltage VCE
V
Ambient temperature Ta °C
BE
VCE(sat) IC
hFE IC
fT
IC
−100
−10
104
103
102
10
104
103
102
10
IC/IB=10
V CE =–4V
VCE=–5V
f=10MHz
TC=25˚C
25˚C
TC =100˚C
−1
–25˚C
TC =100˚C
− 0.1
− 0.01
–25˚C
25˚C
1
1
− 0.01
− 0.1
−1
−10
− 0.01
− 0.1
−1
−10
− 0.01
− 0.1
−1
−10
(
A
)
( )
Collector current IC A
(
A
)
Collector current I C
Collector current IC
Safeoperation area
Rth
t
3
−100
−10
10
Non repetitive pulse
TC=25˚C
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
2
10
(1)
(2)
I
CP
I
C
t=1ms
t=10ms
10
−1
t=300ms
1
− 0.1
− 0.01
10−1
10−4
10−3
10−2
10−1
1
10
102
103
104
−1
−10
−100
−1000
(
V
)
Collector-emitter voltage VCE
Time t (s)
2
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