SMD Type
Transistors
PNP Transistors
2SB1169
■ Typical Characterisitics
PC
Ta
IC VCE
IC VBE
20
15
10
5
−10
−8
−6
−4
−2
0
−2.5
V CE =–4V
TC =25˚C
I =–40mA
B
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
–30mA
−2.0
−1.5
−1.0
− 0.5
0
–25mA
–20mA
25˚C
TC =100˚C
–25˚C
(1)
–10mA
–8mA
–6mA
–4mA
–2mA
(2)
80
0
0
40
120
160
)
0
− 0.4 − 0.8 −1.2 −1.6 −2.0
0
−1
−2
−3
−4
−5
−6
(
a °C
Ambient temperature T
(
V
)
Base-emitter voltage VBE
(
V
)
Collector-emitter voltage VCE
VCE(sat) IC
hFE IC
fT
IC
104
103
102
10
104
103
102
10
−100
−10
IC/IB=10
V CE =–4V
VCE=–5V
f=10MHz
TC=25˚C
25˚C
TC =100˚C
−1
–25˚C
25˚C
TC =100˚C
− 0.1
− 0.01
–25˚C
1
1
− 0.01
− 0.1
−1
−10
− 0.01
− 0.1
−1
−10
− 0.01
− 0.1
−1
−10
(
A
)
(
A
)
Collector current IC
Collector current IC
(
A
)
Collector current IC
Safeoperation area
Rth
t
103
−100
−10
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
Non repetitive pulse
TC=25˚C
102
10
(1)
(2)
I
CP
t=1ms
−1
I
C
t=10ms
t=300ms
1
− 0.1
− 0.01
10−1
10−3
10−2
10−1
10
10
10
2
3
4
1
10
−1
−10
−100
−1000
Time t (s)
(
V
)
Collector-emitter voltage V
CE
2
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