SMD Type
Medium Power Transistor
2SB1132
Transistors
Features
Low V
CE(sat)
Compliments to 2SD1664
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
(DC)
Single pulse, P
W
=100ms
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* mounted on a 40x40x0.7mm ceramic board.
P
C
*
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
-40
-32
-5
-1
-2
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -20V , I
E
= 0
V
EB
= -4V , I
C
= 0
-40
-32
-5
82
150
20
30
390
MHz
pF
Min
Typ
Max
-0.5
-0.5
Unit
ìA
ìA
V
V
V
(BR)CBO
I
C
= -50uA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , I
B
= 0
V
(BR)EBO
I
E
= -50uA
h
FE
f
T
C
ob
V
CE
= -3V , I
C
= -0.1A
V
CE
= -5V , I
E
= 50mA , f = 30MHz
V
CB
= -10V , I
E
= 0 , f = 1MHz
h
FE
Classification
Marking
Rank
h
FE
82
P
180
120
BA
Q
270
180
R
390
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