SMD Type
Transistors
2SB1124
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = -40V , IE = 0
Min
100
Typ
Max
-1
Unit
ìA
Collector cutoff current
ICBO
IEBO
hFE
fT
Emitter cutoff current
VCB = -4V , IE = 0
-1
ìA
DC current Gain
VCE = -2V , IC = -100mA
VCE = -10V , IC = -50mA
VCB = -10V , f = 1MHz
560
Gain bandwidth product
150
39
MHz
pF
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = -2A , IB = -100mA
VBE(sat) IC = -2A , IB = -100mA
V(BR)CBO IC = -10ìA , IE = 0
-0.35 -0.7
-0.94 -1.2
V
-60
-50
-6
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
V
Turn-on time
Storage time
Fall time
ton
70
450
35
ns
ns
ns
tstg
tf
hFE Classification
BG
Marking
Rank
hFE
R
S
T
U
100 200
140 280
200 400
280 560
2
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