SMD Type
2SB1121
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
f
T
Testconditons
V
CB
= -20V , I
E
= 0
V
CB
= -4V , I
E
= 0
V
CE
= -2V , I
C
= -100mA
V
CE
= -10V , I
C
= -50mA
Transistors
Min
Typ
Max
-0.1
-0.1
Unit
ìA
ìA
100
150
-0.35
-0.85
-30
-25
-6
32
60
560
MHz
-0.6
-1.2
V
V
V
V
V
pF
ns
V
CE(sat)
I
C
= -1.5A , I
B
= -75mA
V
BE(sat)
I
C
= -1.5A , I
B
= -75mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
C
ob
t
on
V
CB
= -10V , f = 1MHz
Storage time
t
stg
350
ns
Fall time
t
f
25
ns
h
FE
Classification
Marking
Rank
hFE
100
E
200
160
BC
F
320
280
G
560
2
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