SMD Type
Transistors
PNP Transistors
2SB1070
■ Typical Characterisitics
PC
Ta
IC VCE
VCE(sat) IC
40
30
20
10
0
−6
−100
−10
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
I /IB=20
C
I =–80mA
B
TC=25˚C
−5
–50mA
–45mA
–40mA
−4
–35mA
–30mA
TC=100˚C
(1)
25˚C
−3
−1
–25mA
–25˚C
–20mA
−2
–15mA
− 0.1
− 0.01
–10mA
−1
(2)
(3)
–5mA
0
0
25
50
75
100 125 150
0
−2
−4
−6
−8
−10
− 0.01
− 0.1
−1
−10
(
)
Ambient temperature Ta °C
(
V
)
Collector-emitter voltage VCE
( )
Collector current I C A
VBE(sat) IC
hFE IC
fT
IC
−100
−10
−1000
−100
−10
1000
100
10
I /IB=20
C
VCE=–2V
VCE=–2V
f=10MHz
TC=25˚C
TC=100˚C
25˚C
–25˚C
TC=–25˚C
25˚C
100˚C
−1
− 0.1
− 0.01
−1
1
− 0.1
− 0.01
0.1
− 0.01
− 0.01
− 0.1
−1
−10
− 0.1
−1
−10
− 0.1
−1
−10
(
A
)
Collector current I C
(
A
)
Collector current I
(
)
mA
Collector current I
C
C
ton,tstg,tf
IC
Safe operation area
Rth
t
2
10
−100
−10
10
Non repetitive pulse
TC=25˚C
(1)Without heat sink
(1)
(2)
Pulsed tw =1ms
Duty cycle=1%
IC/IB=10
(2)With a 50×50×2mm Al heat sink
(–IB1=IB2
VCC=–20V
TC=25˚C
)
10
1
ICP
1
t=1ms
IC
t
on
t=300ms
−1
t=10ms
t
stg
t
f
0.1
0.01
10−1
10−2
− 0.1
− 0.01
2
3
4
10−3
10−2
10−1
1
10
10
10
10
−1
−10
−100
−1000
0
−2
−4
−6
−8
Time t (s)
(
V
)
Collector-emitter voltage VCE
Collector current IC (A)
2
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