SMD Type
Silicon PNP Epitaxial
2SB1027
Transistors
Features
Low frequency amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
*1 PW
10 ms, Duty cycle
20%
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*1
P
C
*2
T
j
T
stg
Rating
-180
-160
-5
-1.5
-3
1
150
-55 to 150
Unit
V
V
V
A
A
W
*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE
Testconditons
I
C
= -1 mA, I
E
= 0
I
C
= -10 mA, R
BE
=
I
E
= -1 mA, I
C
= 0
V
CB
= -160 V, I
E
= 0
V
CE
= -5 V, I
C
= -0.15 A,
V
CE
= -5 V, I
C
= -0.5 A,
I
C
= -0.5 A, I
B
= -50 mA,
V
CE
= -5 V, I
C
= -0.15 A,
60
30
-1.0
-0.9
V
V
Min
-180
-120
-5
-10
320
Typ
Max
Unit
V
V
V
ìA
h
FE
Classification
Marking
hFE
EH
60 to 120
EJ
100 to 200
EK
160 to 320
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