SMD Type
Silicon PNP Epitaxial Type
2SA2058
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Features
High DC current gain: h
FE
= 200 to 500 (I
C
= ?0.2 A)
Low collector-emitter saturation voltage: V
CE (sat)
= ?0.19 V (max)
High-speed switching: tf = 25 ns (typ.)
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current
Collector power dissipation DC
Collector power dissipation t=10s *
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
I
B
P
C
P
C
T
j
T
stg
Rating
-20
-10
-7
-1.5
-2.5
-150
500
750
150
-55 to +150
Unit
V
V
V
A
A
mA
mW
mW
* Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:645 mm
2
)
0-0.1
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