SMD Type
PNP Eitaxial Silicon Transistor
2SA1978
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
1
2
+0.1
0.95
-0.1
+0.1
1.9
-0.1
High-speed switching characterstics
0.55
High gain |S
21e
|
2
=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA
+0.1
1.3
-0.1
High fT (fT=5.5GHz TYP).
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-20
-12
-3.0
-50
200
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Collector capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
*
V
CB
= -10V
V
EB
= -2V
V
CE
=-10V,Ic=-15mA
V
CE
= -10V ,Ic=-15mA
V
CB
= -10V , I
E
= 0 , f = 1MHz
8.0
20
4.0
40
5.5
0.5
10.0
2.0
3
1
Testconditons
Min
Typ
Max
-10
-10
100
GHz
pF
dB
dB
Unit
ìA
ìA
|S
21e
|2 Vce=-10V,Ic=-15mA,.f=1.0GHZ
NF
Vce=-10V,Ic=-3mA,.f=1GHZ
*.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Marking
Rank
hFE
T93
FB
20 100
0-0.1
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