SMD Type
PNP Epitaxial Silicon Transistor
2SA1977
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
High f
T
:f
T
= 8.5 GHz TYP.
High gain
| S
21e
| = 12.0 dB TYP. @f = 1.0 GHz, V
CE
= -8 V, I
C
= -20 mA
High-speed switching characterstics
2
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
Features
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-20
-12
-3.0
-50
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain Bandwidth Product
Collector Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
fT
Cre*
V
CB
= -10 V
V
EB
= -1 V
V
CE
= -8 V, I
C
= -20 mA
V
CE
= -8 V, I
C
= -20 mA, f = 1 GHz
V
CB
= -10 V, I
E
= 0, f = 1 MHz
8.0
20
6.0
8.5
0.5
12.0
1.5
3
1
Testconditons
Min
Typ
Max
-0.1
-0.1
100
V
V
MHz
pF
Unit
ìA
ìA
| S
21e
|
2
V
CE
= -8 V, I
C
= -20 mA, f = 1.0 GHz
NF
V
CE
= -8 V, I
C
= -3 mA, f = 1 GHz
*.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Marking
Rank
hFE
T92
FB
20 100
0-0.1
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