SMD Type
Transistors
IC
PNP Epitaxial Planar Silicon Transistors
2SA1839
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Very small-sized package permitting 2SA1839-applied
sets to be made small and slim
Small output capacitance.
Low collector-to-emitter saturation voltage
Low ON resistance
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
-15
-10
-5
-100
-200
-20
250
150
-55 to +150
Unit
V
V
V
mA
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
ON Resistance
Symbol
Ic
BO
I
EBO
h
FE
f
T
Cob
Testconditons
V
CB
= -12V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -2V , I
C
= -5mA
V
CE
= -5V , I
C
= -10mA
V
CB
= -10V , f = 1MHz
200
600
0.9
-0.04 -0.15
-0.82
-15
-10
-15
3.0
-1.1
Min
Typ
Max
-0.1
-0.1
600
MHz
pF
mV
V
V
V
V
Ù
Unit
ìA
ìA
V
CE(sat)
I
C
= -10mA , I
B
=-1mA
V
BE(sat)
I
C
= -10mA , I
B
=-1mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
Ron
I
B
=-3mA,f=1MHz
Marking
Marking
LS
0-0.1
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