SMD Type
Transistors
IC
PNP Epitaxial Planar Silicon Transistors
2SA1745
Features
Very small-sized package.
Low collector-to-emitter saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-20
-15
-5
-500
-1
150
150
-55 to +150
Unit
V
V
V
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Ic
BO
I
EBO
h
FE
f
T
C
ob
V
CE(sat)
Testconditons
V
CB
= -15V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -2V , I
C
= -10mA
V
CE
= -2V , I
C
= -50mA
V
CB
= -10V , f = 1MHz
I
C
= -5mA , I
B
=-0.5mA
I
C
= -200mA , I
B
=-10mA
V
BE(sat)
I
C
= -200mA , I
B
=-10mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
-20
-15
-5
135
400
6.5
-15
-200
-0.95
-35
-360
-1.2
Min
Typ
Max
-0.1
-0.1
600
MHz
pF
mV
mV
V
V
V
V
Unit
nA
nA
h
FE
Classification
Marking
Rank
hFE
5
135 270
ES
6
200 400
7
300 600
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