SMD Type
Transistors
IC
PNP Epitaxial Planar Silicon Transistors
2SA1688
Features
Very small-sized package.
High power gain.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-30
-20
-5
-30
150
150
-55 to +150
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Reverse transfer capacitance
Base-collector time constant
Symbol
Ic
BO
I
EBO
h
FE
f
T
Cre
bb'Cc
Testconditons
V
CB
= -10V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -6V , I
C
= -1mA
V
CE
= -6V , I
C
= -1mA
V
CB
= -6V , f = 1MHz
V
CE
= -6V , I
C
= -1mA, f = 31.9MHz
60
150
230
1.1
11
1.7
20
Min
Typ
Max
-0.1
-0.1
270
MHz
pF
ps
Unit
ìA
ìA
Voltage gain
PG
22
dB
Noise figure
NF
V
CE
= -6V, I
C
= -1mA, f = 100MHz
2.5
dB
h
FE
Classification
Marking
Rank
hFE
3
60 120
E
4
90 180
5
135 270
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