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2SA1685 参数 Datasheet PDF下载

2SA1685图片预览
型号: 2SA1685
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面硅晶体管 [PNP Epitaxial Planar Silicon Transistors]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 2 页 / 54 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
 浏览型号2SA1685的Datasheet PDF文件第1页  
SMD Type  
Transistors  
2SA1685  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
VCB = -30V , IE = 0  
Min  
60  
Typ  
Max  
-0.1  
-0.1  
270  
Unit  
ìA  
Collector cutoff current  
IcBO  
IEBO  
hFE  
fT  
Emitter cutoff current  
VEB = -4V , IC = 0  
ìA  
DC current Gain  
VCE = -1V , IC = -10mA  
VCE = -10V , IC = -10mA  
VCB = -10V , f = 1MHz  
Gain bandwidth product  
400  
2.9  
MHz  
pF  
V
Common base output capacitance  
Collector-to-emitter saturation voltage  
Base-to-emitter saturation voltage  
Collector-to-base breakdown voltage  
Collector-to-emitter breakdown voltage  
Emitter-to-base breakdown voltage  
Cob  
VCE(sat) IC = -10mA , IB =-1mA  
VBE(sat) IC = -10mA , IB =-1mA  
V(BR)CBO IC = -10ìA , IE = 0  
-0.07 -0.2  
-0.75  
-1  
V
-40  
-20  
-5  
V
V(BR)CEO  
V
IC = -1mA , RBE =  
V(BR)EBO IE = -10ìA , IC = 0  
V
Delay time  
Rise time  
Storage time  
Fall time  
td  
14  
11  
80  
16  
20  
20  
ns  
ns  
ns  
ns  
tr  
ts  
tf  
180  
25  
hFE Classification  
YL  
Marking  
Rank  
3
4
hFE  
60 120  
90 180  
2
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