SMD Type
Silicon Power Transistors
2SA1615-Z
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
Large current capacity.
+0.2
9.70
-0.2
High h
FE
and low collector saturation voltage.
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse
Base current
Total power dissipation
Junction temperature
Storage temperature
* PW
10 ms, duty cycle
50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
*
I
B
P
T
T
j
T
stg
Rating
-30
-20
-10
-10
-15
-0.5
1.0
150
-55 to +150
Unit
V
V
V
A
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulse test: tp
350 ìs; d
0.02.
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -20V, I
E
=0
V
EB
= -8V, I
C
=0
V
CE
= -2V , I
C
= -0.5A
V
CE
= -2.0 V, I
C
=-4.0 A
V
CE(sat)
I
C
= -4A , I
B
= -0.05A
V
BE(sat)
I
C
= -4A , I
B
= -0.05A
f
T
C
ob
t
on
t
stg
t
f
V
CE
= -5V , I
E
= 1.5A
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
I
C
= -5.0 A, I
B1
= -I
B2
= 0.125 A,
R
L
= 2.0
, V
CC
= -10 V
200
160
-0.2
-0.9
180
220
80
300
60
-0.25
-1.2
MHz
pF
ns
ns
ns
V
Min
Typ
Max
-1
-1
600
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
L
200 400
300
K
600
3
.8
0
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