SMD Type
PNP silicon Transistor
2SA1576
Transistors
Features
Low noise:NF=0.5dB(TYP.)
Epitaxial planar type.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-50
-40
-5
-100
200
125
-55 to +125
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-30V
V
EB
=-4V
Testconditons
Min
-50
-40
-5
-0.5
-0.5
-0.5
120
140
3.5
560
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
=-50mA/-5mA
h
FE
f
T
C
ob
V
CE
=-6V, I
C
=-1mA
V
CE
=-12V, I
E
=2mA
V
CB
=-12V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
h
FE
Q
120 270
R
180 390
S
270 560
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