SMD Type
Silicon PNP Epitaxial
2SA1484
SOT-23
Transistors
IC
Unit: mm
Features
3
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
2.4
-0.1
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
-90
-90
-5
-100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
* Pulse test.
Symbol
Testconditons
Min
-90
-90
-5
-0.1
-0.1
250
800
-0.15
-1
V
V
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
V
(BR)CEO
I
C
= -1 mA, R
BE
=
V
(BR)EBO
I
E
= -10 ìA, IC = 0
I
CBO
I
EBO
h
FE
V
CB
= -70 V, I
E
= 0
V
EB
= -2 V, I
C
= 0
V
CE
= -12 V, I
C
= -2 mA ( * )
V
CE(sat)
I
C
= -10 mA, I
B
= -1 mA ( * )
V
BE(sat)
IC = -10 mA, I
B
= -1 mA ( * )
h
FE
Classification
Marking
hFE
IRD
250 500
IRE
400
800
0-0.1
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