SMD Type
Silicon PNP Epitaxial
2SA1468
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
High voltage amplifier.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
-180
-180
-5
-100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
DC current transfer ratio
Collector to emitter saturation voltage
Base emitter voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
-180
-180
-5
100
320
-0.5
-1
200
3.5
V
V
MHz
pF
Typ
Max
Unit
V
V
V
V
(BR)CBO
I
C
= -10 ìA, I
E
= 0
V
(BR)CEO
I
C
= -0.5 mA, R
BE
=
V
(BR)EBO
I
E
= -10 ìA, I
C
= 0
h
FE
V
CE
= -12 V,I
C
= -2 mA
V
CE(sat)
I
C
= -30 mA,I
B
= -3 mA
V
BE
f
T
C
ob
V
CE
= -12 V, I
C
= -2 mA
V
CE
= -12 V,I
C
= -10 mA
V
CB
= -10 V, I
E
= 0,f = 1 MHz
h
FE
Classification
Marking
Rank
hFE
INB
B
100 200
INC
C
160 320
+0.1
0.38
-0.1
0-0.1
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