SMD Type
Silicon PNP Epitaxia
2SA1411
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Features
Very high DC current gain:h
FE
=500 to 1600.
High V
EBO
Voltage:V
EBO
=-10V
+0.1
2.4
-0.1
Unit: mm
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
at 25
ambient temperature
T
j
T
stg
150
-55 to +150
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Rating
-25
-25
-10
-150
200
Unit
V
V
V
mA
mW
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
* PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
V
BE
Testconditons
V
CB
= -25 V, I
E
= 0
V
EB
= -7 V, I
C
= 0
V
CE
= -5 V, I
C
= -1 mA
V
CE
= -5 V, I
C
= -1 mA
500
1000
-580
-0.15
-0.8
200
4.6
0.12
0.58
0.75
-0.3
-1.2
Min
Typ
Max
-100
-100
1600
mV
V
V
MHz
pF
ns
ns
ns
Unit
nA
nA
V
CE(sat)
I
C
= -50mA , I
B
= -5mA
V
BE(sat)
I
C
= -50mA , I
B
= -5mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= -5V , I
E
= 10mA
V
CB
= -5V , I
E
= 0 , f = 1.0MHz
V
CC
= -10V , V
BE(off)
= 2.7V ,
I
C
= -50mA ,
I
B1
= -I
B2
= -1mA
h
FE
Classification
Marking
hFE
M15
500
1000
M16
800
1600
0-0.1
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