SMD Type
Transistors
2SA1330
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
IEBO
Testconditons
Min
Typ
Max
-100
-100
450
Unit
nA
VCB = -200V, IE=0
VEB = -5V, IC=0
nA
VCE = -10V , IC = -10mA
VCE = -10V , IC = -50mA
VCE = -10V , IC = -10mA
90
50
200
195
DC current gain *
hFE
Base-emitter voltage *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
VBE
-0.6 -0.65 -0.7
-0.21 -0.3
V
V
VCE(sat) IC = -50mA , IB = -5mA
VBE(sat) IC = -50mA , IB = -5mA
-0.8
120
3.6
-1.2
V
fT
Cob
ton
tstg
tf
VCE = -10V , IE = 10mA
VCB = -30V , IE = 0 , f = 1.0MHz
IC = -10mA, IB1 = -IB2 = -1mA,
VCC = -10 V
MHz
pF
ìs
ìs
ìs
0.16
1.3
Storage time
Fall time
VBE(off) = 2.5V
0.18
* Pulse test: tp
350 ìs; d
0.02.
hFE Classification
Marking
hFE
O5
90 180
O6
135 270
O7
200 450
2
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