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2SA1330 参数 Datasheet PDF下载

2SA1330图片预览
型号: 2SA1330
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延晶体管 [PNP Silicon Epitaxial Transistor]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 2 页 / 38 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
 浏览型号2SA1330的Datasheet PDF文件第1页  
SMD Type  
Transistors  
2SA1330  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
-100  
-100  
450  
Unit  
nA  
VCB = -200V, IE=0  
VEB = -5V, IC=0  
nA  
VCE = -10V , IC = -10mA  
VCE = -10V , IC = -50mA  
VCE = -10V , IC = -10mA  
90  
50  
200  
195  
DC current gain *  
hFE  
Base-emitter voltage *  
Collector-emitter saturation voltage *  
Base saturation voltage *  
Gain bandwidth product  
Output capacitance  
Turn-on time  
VBE  
-0.6 -0.65 -0.7  
-0.21 -0.3  
V
V
VCE(sat) IC = -50mA , IB = -5mA  
VBE(sat) IC = -50mA , IB = -5mA  
-0.8  
120  
3.6  
-1.2  
V
fT  
Cob  
ton  
tstg  
tf  
VCE = -10V , IE = 10mA  
VCB = -30V , IE = 0 , f = 1.0MHz  
IC = -10mA, IB1 = -IB2 = -1mA,  
VCC = -10 V  
MHz  
pF  
ìs  
ìs  
ìs  
0.16  
1.3  
Storage time  
Fall time  
VBE(off) = 2.5V  
0.18  
* Pulse test: tp  
350 ìs; d  
0.02.  
hFE Classification  
Marking  
hFE  
O5  
90 180  
O6  
135 270  
O7  
200 450  
2
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