SMD Type
Audio Power Applications
2SA1314
Transistors
Features
Low Saturation Voltage
: V
CE(sat)
= -0.5V (max) (I
C
= -2A, I
B
= -50mA)
Small Flat Package
Complementary to 2SC2982
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulsed) *1
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
*2
T
j
T
stg
Rating
-20
-10
-6
-2
-4
-2
500
1000
150
-55 to +150
Unit
V
V
V
A
A
A
mW
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
*2 Mounted on ceramic substrate (250 mm
2
x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -20V , I
E
= 0
V
EB
= -6V , I
C
= 0
-10
-6
140
60
120
-0.2
-0.83
140
50
-0.5
-1.5
V
V
MHz
pF
600
Min
Typ
Max
-100
-100
Unit
nA
nA
V
V
V
(BR)CEO
I
C
= -10mA , I
B
= 0
V
(BR)EBO
I
E
= -1mA , I
C
= 0
h
FE
V
CE
= -1V , I
C
= -0.5A
V
CE
= -1V , I
C
= -4A
V
CE(sat)
I
C
= -2A , I
B
= -50mA
V
BE
f
T
C
ob
V
CE
= -1V , I
C
= -2A
V
CE
= -1V , I
C
= -0.5A
V
CB
= -10V , I
E
= 0 , f = 1MHz
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