SMD Type
Silicon PNP Epitaxial Type
2SA1312
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
High hFE.
Low noise.
Small package.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
High voltage.
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-120
-120
-5
-100
-20
150
125
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Gain bandwidth product
Output capacitance
Noise figure
Symbol
Ic
BO
I
EBO
h
FE
Testconditons
V
CB
= -120V , I
E
= 0
V
EB
= -5V , I
C
= 0
V
CE
= -6V , I
C
= -2mA
200
Min
Typ
Max
-0.1
-0.1
700
-0.3
100
4
0.5
0.2
6
3
V
MHz
pF
dB
dB
Unit
ìA
ìA
V
CE(sat)
I
C
= -10mA , I
B
=-1mA
f
T
C
ob
NF
NF
V
CE
= -6V , I
C
= -1mA
V
CB
= -10V , f = 1MHz
V
CE
=-6 V, I
C
=-0.1 mA, f=100 Hz,R
g
=10 KÙ
V
CE
=-6 V, I
C
=-0.1 mA, f=1 kHz,R
g
=10 KÙ
h
FE
Classification
Marking
Rank
hFE
ABG
GR
200 400
ABL
BL
350 700
+0.1
0.38
-0.1
0-0.1
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