SMD Type
Silicon PNP Epitaxial
2SA1182
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
Features
SOT-23 package
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
-35
-30
-5
-500
-50
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -35 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -1 V, I
C
= -100 mA
V
CE
= -6 V, I
C
= -400 mA
V
CE (sat)
I
C
= -100 mA, I
B
= -10 mA
V
BE
C
ob
f
T
V
CE
= -1 V, I
C
= -100 mA
V
CB
= -6 V, I
E
= 0, f = 1 MHz
V
CE
= -6 V, I
C
= -20 mA
70
25
-0.1
-0.8
13
200
-0.25
-1.0
V
V
pF
MHz
Min
Typ
Max
-0.1
-0.1
240
Unit
A
A
h
FE
Classification
Marking
Rank
hFE
ZO
O
70 140
ZY
Y
120 240
+0.1
0.38
-0.1
0-0.1
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