SMD Type
Silicon PNP Epitaxial
2SA1171
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Low frequency small signal amplifier
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
-90
-90
-5
-50
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector to emitter breakdown voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
-90
-0.5
250
800
-0.75
-0.5
200
1.6
V
V
MHz
pF
Typ
Max
Unit
V
ìA
V
(BR)CEO
I
C
= -1 mA, R
BE
=
I
CBO
h
FE
V
BE
V
CB
= -75 V, I
E
= 0
V
CE
= -12 V, I
C
= -2 mA
V
CE
= -12 V, I
C
= -2 mA
V
CE(sat)
I
C
= -10 mA, I
B
= -1 mA
f
T
C
ob
V
CE
= -12 V, I
C
= -2 mA
V
CB
= -25 V, I
E
= 0, f = 1 MHz
h
FE
Classification
Marking
hFE
PD
250 500
PE
400 800
0-0.1
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