SMD Type
Silicon PNP Epitaxial Planar Type
2SA1022
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
Mini type package,allowing downsizing of the equipment and automatic
1
2
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
High transition frequency f
T
.
insertion through the tape packing and the magazine packing.
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-30
-20
-5
-30
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
Testconditons
V
CB
= -10 V, I
E
= 0
V
CE
= -20 V, I
B
= 0
V
EB
= -5.0 V, I
C
= 0
V
CE
= -10 V, I
C
= -1 mA
70
-0.1
-0.7
150
300
2.8
22
1.2
Min
Typ
Max
-0.1
-100
-10
220
V
V
MHz
dB
Ù
pF
Unit
ìA
ìA
ìA
V
CE(sat)
I
C
= -10 mA, I
B
= -1 mA
V
BE
f
T
NF
Z
rb
C
re
V
CE
=-10 V, I
C
= -1 mA
V
CB
= -10 V, I
E
= 1 mA f = 200 MHz
V
CB
= -10 V, I
E
= 1 mA f = 5 MHz
V
CB
= -10 V, I
E
= 1 mA f = 2 MHz
V
CE
= -10 V, Ic = -1 mA f = 10.7 MHz
h
FE
Classification
Marking
h
FE
EB
70 140
EC
110 220
0-0.1
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