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2N7002 参数 Datasheet PDF下载

2N7002图片预览
型号: 2N7002
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 1 页 / 43 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
   
SMD Type
N-Channel MOSFET
2N7002
SOT-23
MOSFET
Unit: mm
Features
High density cell design for low R
DS(ON)
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Rugged and reliable
High saturation current capability
1
2
+0.1
1.3
-0.1
Voltage controlled small signal switch
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
DS
I
D
P
D
T
J
T
stg
Rating
60
115
225
150
-55 to 150
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-threshold voltage
Drain-source on-resistance
On-state drain current
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
Drain-source on-voltage
Diode forward voltage
Symbol
V
DSS
I
DSS
l
GSS
V
GS(th)
r
DS(0n)
I
D(on)
g
ts
C
iss
C
OSS
C
rSS
t
d(0n)
t
d(off)
V
DS(on)
V
SD
V
DD
=25 V, R
L
=50
I
D
=500 mA,V
GEN
=10 V
R
G
=25
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
I
S
=115 mA, V
GS
=0 V
0.5
0.05
0.55
V
DS
=25 V, V
GS
=0 V, f=1 MHz
Testconditons
V
GS
=0 V, I
D
=10 µA
V
DS
=60 V, V
GS
=0 V
V
DS
=0 V, V
GS
= 25 V
V
DS
=V
GS
, I
D
=250 µA
V
GS
=10 V, I
D
=500 mA
V
GS
=5 V, I
D
=50 mA
V
GS
=10 V, V
DS
=7 V
V
DS
=10 V, I
D
=200 mA
1
1
1
500
80
500
50
25
5
20
ns
40
3.75
0.375
1.2
V
V
V
pF
Min
60
80
80
2.5
7.5
7.5
mA
ms
Typ
Max
Unit
V
nA
nA
V
Marking
Marking
702
0-0.1
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