SMD Type
Silicon Epitaxial Planar Diode
1SV310
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
+0.05
0.3
-0.05
+0.05
0.85
-0.05
Features
High Capacitance Ratio:C1V/C4V=2.1(Typ.)
Low Series Resistance:rs=0.28
(Typ.)
0.475
0.375
+0.1
2.6
-0.1
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
V
R
T
j
T
stg
Value
10
125
-55 to +125
Unit
V
Electrical C haracteristics T a = 25
P aram eter
Reverse V oltage
Reverse Current
Capacitance
Capacitance Ratio
S eries Resistance
S ym bol
V
R
I
R
C
1V
C
4V
C
1V
/C
4V
r
s
V
R
= 1V , f = 470 M Hz
Conditions
I
R
= 1
A
M in
10
3
9.7
4.45
1.8
2.1
0.28
0.4
11.1
5.45
Typ
M ax
Unit
V
nA
pF
V
R
= 10 V
f = 1 M Hz;V
R
= 1 V
f = 1 M Hz;V
R
= 4 V
Marking
Marking
V1
+0.05
0.1
-0.02
+0.1
1.3
-0.1
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