SMD Type
Diodes
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE
1SS303
Features
Low capacitance: Ct = 2.5 pF TYP.
High speed switching: trr = 4.0 ns MAX.
Wide applications including switching, limitter, clipper.
Double diode configuration assures economical use.
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
P e a k R e v e rs e V o lta g e
D C R e v e rs e V o lta g e
S u rg e C u rre n t (1
S u rg e C u rre n t (1
s ) N o te 1
s)
S ym bol
V
RM
V
R
I
F S M
I
F S M
I
F M
I
F M
I
O
I
O
T
j
T
s tg
R
th (
R
th (
j-a )
j-a )
R a tin g
75
50
6 .0
4 .0
450
300
150
100
150
-5 5 to + 1 5 0
1 .0
0 .8 5
U n it
V
V
A
A
mA
mA
mA
mA
P e a k F o rw a rd C u rre n t N o te 1
P e a k F o rw a rd C u rre n t
A v e ra g e R e c tifie d C u rre n t (N o te 1 )
A v e ra g e R e c tifie d C u rre n t
J u n c tio n T e m p e ra tu re
S to ra g e T e m p e ra tu re R a n g e
J u n c tio n to A m b ie n t (N o te 1 )
J u n c tio n to A m b ie n t
N o te
1 .B o th d io d e s lo a d e d s im u lta n e o u s ly .
/m W
/m W
Electrical Characteristics Ta = 25
Parameter
Symbol
V
F(1)
Forward voltage
V
F(2)
V
F(3)
Reverse current
Capacitance
Reverse recovery time
I
R(1)
C
t
t
rr
Test Conditions
I
F
= 1 mA
I
F
= 50 mA
I
F
= 100 mA
V
R
= 50 V
V
R
= 0, f = 1.0 MHz
2.5
Min
Typ
0.72
0.88
1.0
Max
1.0
1.1
1.2
0.1
4.0
4.0
A
pF
ns
V
Unit
Marking
Marking
A4
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