omponents
21201 Itasca Street Chatsworth
!"#
$% !"#
Features
•
•
•
•
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
MBR1020
THRU
MBR10100
10 Amp
Schottky Barrier
Rectifier
20 to 100 Volts
•
•
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
TO-220AC
B
C
K
L
M
D
A
PIN
1
2
MBR1020
MBR1030
MBR1035
MBR1040
MBR1045
MBR1060
MBR1080
MBR10100
MBR1020
MBR1030
MBR1035
MBR1040
MBR1045
MBR1060
MBR1080
MBR10100
14V
21V
24.5V
28V
31.5V
42V
56V
70V
E
F
G
I
H
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
MBR1020-1045
MBR1045-1060
MBR1080-10100
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
MBR1020-1045
MBR1060-10100
Typical Junction
Capacitance
I
F(AV)
I
FSM
10A
150A
T
C
= 125°C
8.3ms, half sine
A
B
C
D
E
F
G
H
I
J
K
L
M
N
PIN 1
PIN 2
CASE
MM
14.22
9.65
2.54
5.84
9.65
------
12.70
4.83
0.51
0.30
3.53
3.56
1.14
2.03
15.88
10.67
3.43
6.86
10.67
6.35
14.73
5.33
1.14
0.64
4.09
4.83
1.40
2.92
V
F
.84V
.95V
.84V
I
FM
= 20 A mper
T
A
= 25°C
I
FM
= 10 A mper
IR
0.1mA T
J
= 25°C
0.15mA
400pF
Measured at
1.0MHz, V
R
=4.0V
INCHES
.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.190
.210
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
C
J
www.kersemi.com