MBR1090CT, MBR10100CT
4.0
D = 0.8
3.5
10 000
D = 0.5
D = 0.3
D = 0.2
D = 1.0
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
1000
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
D = 0.1
T
Junction Capacitance (pF)
6
Average Power Loss (W)
100
D = t
p
/T
t
p
10
3
4
5
0.1
1
10
100
Average Forward Current (A)
Reverse
Voltage
(V)
Figure 3. Forward Power Loss Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
T
A
= 150 °C
10
T
A
= 125 °C
T
A
= 100 °C
1
T
A
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0.01
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
100
Instantaneous Reverse Current (mA)
10
T
A
= 150 °C
T
A
= 125 °C
1
T
A
= 100 °C
0.1
0.01
T
A
= 25 °C
0.001
0.0001
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 5. Typical Reverse Characteristics Per Diode
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