IRFR/U6215PbF
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -6.6A
16
V
DS
= -120V
V
DS
= -75V
V
DS
= -30V
C, Capacitance (pF)
C
iss
1200
12
C
oss
800
8
C
rss
400
4
0
1
10
100
A
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
10
T
J
= 175°C
T
J
= 25°C
-I
D
, Drain Current (A)
10
100µs
1
1ms
0.1
0.2
0.6
1.0
1.4
V
GS
= 0V
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
100
10ms
A
1000
1.8
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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