IRFR/U5305PbF
2500
2000
-V
GS
, Gate-to-Source Voltage (V)
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -16A
V
DS
= -44V
V
DS
= -28V
16
C, Capacitance (pF)
1500
C
oss
12
1000
8
C
rss
500
4
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
100
100
100µs
T
J
= 175°C
T
J
= 25°C
10
1ms
10
0.4
0.8
1.2
1.6
V
GS
= 0V
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
A
100
2.0
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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