IRFR/U3706
100000
10
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
28A
V
DS
= 16V
V
DS
= 10V
V
GS
, Gate-to-Source Voltage (V)
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
4
100
Crss
2
10
1
10
100
0
0
10
20
30
40
50
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
T
J
= 175
°
C
I
D
, Drain Current (A)
100
100us
10
1ms
10
10ms
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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