IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
10000
C, Capacitance (pF)
1000
I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
C
iss
100
T
J
= 150
°
C
1
C
oss
10
T
J
= 25
°
C
C
rss
1
1
10
100
1000
A
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= 1.4A
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
100
V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
16
I
D
, Drain Current (A)
10
10us
12
8
100us
1
1ms
4
0
0
2
4
6
FOR TEST CIRCUIT
SEE FIGURE 13
8
10
12
14
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
10000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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