IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
10
500
400
300
200
100
0
V
= 0V,
f = 1MHz
GS
C
= C + C
C
SHORTED
iss
gs gd ,
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
°
T = 150 C
J
1
°
T = 25 C
J
C
C
oss
rss
V
= 0 V
GS
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
20
I
D
= -1.1A
OPERATION IN THIS AREA LIMITED
BY R
V
V
V
=-320V
=-200V
=-80V
DS(on)
DS
DS
DS
16
12
8
10
1
10us
100us
1ms
4
°
T = 25 C
J
C
10ms
°
T = 150 C
FOR TEST CIRCUIT
SEE FIGURE 13
Single Pulse
0
0.1
0
4
8
12
16
10
100
1000
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
4
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