IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
500
400
300
Ciss
-I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
C, Capacitance (pF)
T
J
= 150
°
C
1
200
Coss
100
T
J
= 25
°
C
Crss
0
1
10
100
0.1
1.0
V
GS
= 0 V
2.0
3.0
4.0
5.0
-V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
-V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= -1.1A
V
DS
=-320V
V
DS
=-200V
V
DS
=-80V
100
-V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
16
-I
D
, Drain Current (A)
I
10
10us
12
100us
1
1ms
8
4
0
0
4
8
FOR TEST CIRCUIT
SEE FIGURE 13
12
16
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
10ms
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
-V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
4
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