IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
5.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
- 200
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
- 0.23
-
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.0
-
-
-
-
-
-
- 4.0
100
- 100
- 500
3.0
-
VGS
=
20 V
-
nA
VDS = - 200 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
µA
V
DS = - 160 V, VGS = 0 V, TJ = 125 °C
-
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
ID = - 1.1 Ab
Ω
VDS = - 50 V, ID = - 1.1 A
0.98
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
170
54
16
-
-
VGS = 0 V,
DS = - 25 V,
f = 1.0 MHz, see fig. 5
V
-
pF
nC
-
8.9
2.1
3.9
-
ID = - 1.3 A, VDS = - 160 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = - 10 V
-
-
8.0
12
11
13
-
VDD = - 100 V, ID = - 2.3 A,
ns
RG = 24 Ω, RD = 41 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
IS
-
-
-
-
- 1.9
- 7.6
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 1.9 A, VGS = 0 Vb
-
-
-
-
- 5.8
220
1.1
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
110
0.56
ns
µC
TJ = 25 °C, IF = - 2.3 A, dI/dt = 100 A/µsb
Qrr
t
Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
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