AUTOMOTIVE GRADE
®
PD-96302
Features
P-Channel
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
AUIRFR6215
HEXFET Power MOSFET
V
(BR)DSS
R
DS(on)
max.
S
-150V
0.295
:
-13A
G
I
D
D
Description
Specifically designed for Automotive applications of
HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
G
D-Pak
AUIRFR6215
D
S
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
ch
ch
dh
e
ch
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient(PCB mount)
Junction-to-Ambient
hj
Typ.
Max.
1.4
50
110
Units
°C/W
i
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1
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
