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IRFR6215TRL 参数 Datasheet PDF下载

IRFR6215TRL图片预览
型号: IRFR6215TRL
PDF下载: 下载PDF文件 查看货源
内容描述: 汽车级 [AUTOMOTIVE GRADE]
分类和应用:
文件页数/大小: 10 页 / 3885 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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AUIRFR6215  
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
-150 ––– –––  
––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA  
Conditions  
VGS = 0V, ID = -250µA  
V(BR)DSS  
V
V(BR)DSS/TJ  
Breakdown Voltage Temp. Coefficient  
–––  
–––  
-2.0  
3.6  
––– 0.295  
––– 0.58  
VGS = -10V, ID = -6.6A  
VGS = -10V, ID = -6.6A TJ = 150°C  
VDS = VGS, ID = -250µA  
VDS = -50V, ID = -6.6A  
VDS = -150V, VGS = 0V  
VDS = -120V, VGS = 0V, TJ = 150°C  
VGS = 20V  
RDS(on)  
VGS(th)  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
–––  
–––  
–––  
-4.0  
–––  
-25  
V
S
gfs  
Forward Transconductance  
Drain-to-Source Leakage Current  
IDSS  
–––  
–––  
–––  
–––  
µA  
nA  
––– -250  
––– 100  
––– -100  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
VGS = -20V  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter Min. Typ. Max. Units Conditions  
Total Gate Charge  
Qg  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
14  
66  
8.1  
35  
ID = -6.6A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC  
V
DS =-120V  
GS = -10V, See Fig 6 and 13  
V
–––  
–––  
–––  
–––  
VDD = -75V  
36  
ID = -6.6A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
53  
RG = 6.8Ω  
37  
RD = 12Ω, See Fig. 10  
D
S
Between lead,  
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
–––  
–––  
4.5  
7.5  
–––  
–––  
nH 6mm (0.25in.)  
from package  
G
and center of die contact  
VGS = 0V  
VDS = -25V  
Ciss  
Coss  
Crss  
Input Capacitance  
–––  
–––  
–––  
860  
220  
130  
–––  
–––  
–––  
Output Capacitance  
pF  
ƒ = 1.0MHz, See Fig.5  
Reverse Transfer Capacitance  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
D
IS  
Continuous Source Current  
–––  
–––  
-13  
(Body Diode)  
showing the  
integral reverse  
A
G
ISM  
Pulsed Source Current  
–––  
–––  
-44  
S
(Body Diode)  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
–––  
–––  
–––  
–––  
160  
1.2  
-1.6  
240  
1.7  
V
TJ = 25°C, IS =-6.6A, VGS = 0V  
TJ = 25°C, IF =-6.6A  
di/dt = 100A/µs  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
ns  
nC  
Qrr  
ton  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
2
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