IRFR/U6215PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-150 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.295
––– ––– 0.58
-2.0 ––– -4.0
VGS = -10V, ID = -6.6A
VGS = -10V, ID = -6.6A TJ = 150°C
VDS = VGS, ID = -250µA
VDS = -50V, ID = -6.6A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = 20V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
3.6
––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 66
––– ––– 8.1
––– ––– 35
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = -6.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -120V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
14 –––
36 –––
53 –––
37 –––
VDD = -75V
ID = -6.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
RD = 12Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
4.5
–––
6mm (0.25in.)
nH
pF
G
from package
––– 7.5 –––
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 860 –––
––– 220 –––
––– 130 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-13
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-44
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.6
––– 160 240
––– 1.2 1.7
V
TJ = 25°C, IS = -6.6A, VGS = 0V
ns
TJ = 25°C, IF = -6.6A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH
Pulse width ≤ 300µs; duty cycle ≤ 2%
ꢀ This is applied for I-PAK, LS of D-PAK is measured between lead and
RG = 25Ω, IAS = -6.6A. (See Figure 12)
center of die contact
ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Uses IRF6215 data and test conditions
2
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