IRFR5410TRR 参数 Datasheet PDF下载

PD - 96344

AUTOMOTIVE GRADE

Features

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AUIRFR5410

HEXFET

®

Power MOSFET

D

●

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Advanced Planar Technology

P-Channel MOSFET

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to

Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

V

(BR)DSS

R

DS(on)

max.

I

D

-100V

0.205

-13A

G

S

Description

Specifically designed for Automotive applications,

this Cellular Planar design of HEXFET® Power

MOSFETs utilizes the latest processing techniques

to achieve low on-resistance per silicon area. This

benefit combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for

use in Automotive and a wide variety of other

applications.

D

S

D-Pak

AUIRFR5410

G

G

D

S

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

A

) is 25°C, unless otherwise specified.

Parameter

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

Max.

-13

-8.2

-52

66

0.53

± 20

194

-8.4

6.3

-5.0

-55 to + 150

300

Units

A

W

W/°C

V

mJ

A

mJ

V/ns

°C

c

P

D

@T

C

= 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

V

GS

E

AS

I

AR

E

AR

dv/dt

T

J

T

STG

Avalanche Current

Single Pulse Avalanche Energy (Thermally Limited)

c

d

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

c

e

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

R

JC

R

JA

R

JA

Junction-to-Case

gj

Parameter

Typ.

–––

–––

–––

Max.

1.9

50

110

Units

°C/W

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

i

www.kersemi.com

1

12/06/10