IRFR/U3709ZPbF
100000
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 12A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
V
= 24V
= 15V
rss
oss
gd
= C + C
DS
DS
ds
gd
10000
1000
100
C
iss
C
oss
C
rss
10
1
10
100
0
5
10
15
20
25
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
10msec
100
0
1
0.0
0.5
1.0
1.5
2.0
2.5
0
1
10
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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